针对侧栅结构高电子迁移率晶体管(High Electron Mobility Transistors,HEMTs)太赫兹探测器,构建了器件的直流输运和太赫兹探测的物理模型.运用自对准工艺,成功制备了形态良好、接触可靠的侧栅结构,有效地解决了器件双侧栅与台面间的接触问题,最终获得了不同栅宽(200 nm、800 nm和1 400 nm)的侧栅GaN/AlGaN HEMT太赫兹探测器.通过直流测试表征发现,不同器件的栅宽与其阈值电压之间呈现出明显的线性关系,验证了侧栅结构HEMT太赫兹探测器的直流输运模型.上述结果为完整的侧栅HEMT太赫兹探测器的理论模型提供了实验验证和指导,为侧栅HEMT太赫兹探测器的发展提供了重要支持.
The physical model,structural fabrication,and DC testing of lateral gate transistor terahertz detectors
For the high-electron-mobility transistor(HEMT)terahertz detector with a side-gate structure,a physical model for DC transport and terahertz detection of the device was constructed.Using a self-alignment process,well-shaped and reliable contacts for the side-gate structure were successfully fabricated,effectively solving contact issues be-tween the dual gates and the mesa.Ultimately,terahertz detectors with different gate widths(200 nm,800 nm,and 1400 nm)of side-gate GaN/AlGaN HEMTs were obtained.DC tests revealed a clear linear relationship between the gate widths of different devices and their threshold voltages,confirming the DC transport model of the side-gate HEMT terahertz detector.These results provide experimental verification and guidance for the theoretical model of the complete side-gate HEMT terahertz detector,offering significant support for the development of side-gate HEMT terahertz detec-tors.
GaN-basedterahertz detectorlateral gatehigh electron mobility transistors
国家科技期刊平台
NSTL
万方数据
