低对称性二维材料是一类晶格对称操作少，纵向仅有原子级厚度的新型纳米材料。在二维过渡金属硫族化合物(Transition metal dichalcogenides，TMDs)体系中，1T'-MoTe2、1T'-WTe2、1T'-ReS2和 1T'-ReSe2是典型低对称性成员。独特的晶格对称性为它们带来了丰富的各向异性理化性质，因而在微纳光子学、触觉传感器、各向异性逻辑器件等领域具有特殊应用前景。低对称性二维TMDs材料的基础研究和应用开发依赖于对这类材料的高质量、大尺寸、稳定制备。本文以这4类材料为典型，首先按金属前驱体进行分类，综述了近年来有关低对称性二维TMDs材料的化学气相沉积(Chemical vapor deposition，CVD)制备方法;其次，针对制备过程中1T'-MoTe2容易发生相转变，1T'-ReS2、1T'-ReSe2与基底间相互作用力弱等特点，介绍了 1T'-MoTe2制备过程中的相调控机制，以及1T'-ReS2、1T'-ReSe2制备过程中的基底工程研究;最后，本文对低对称性二维TMDs材料未来的挑战与机遇进行了展望。
Synthesis of Low-Symmetry 2D Transition Metal Dichalcogenides by Chemical Vapor Deposition
Low-symmetry two-dimensional materials are a new type of nanomaterials with few lattice symmetry operations and only atomic-level thickness in the longitudinal direction.In the two-dimensional transition metal dichalcogenides(TMDs)system,1T'-MoTe2,1T'-WTe2,1T'-ReS2 and 1T'-ReSe2 are typical low-symmetry members.The unique lattice symmetry brings them rich anisotropic physical and chemical properties,so they have special application prospects in the fields of micro-nano photonics,tactile sensors,and anisotropic logic devices.The basic research and application development of low-symmetry two-dimensional TMD materials relies on the high-quality,large-size,and stable preparation of such materials.Therefore,this paper takes these four types of materials as typical materials,first classifies them according to metal precursors,and reviews the chemical vapor deposition(CVD)preparation methods of low-symmetry two-dimensional TMD materials in recent years.According to the characteristics of 1T'-MoTe2 easy to undergo phase transition and weak interaction between1T'-ReS2,1T'-ReSe2 and the substrate during the preparation process,the phase regulation mechanism in the preparation process of 1T'-MoTe2 and the substrate engineering research in the preparation process of 1T'-ReS2 and 1T'-ReSe2 were introduced.Finally,this paper looks forward to the future challenges and opportunities of low-symmetry 2D TMDs materials.
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