用固相反应法制备了 B 位 Hf 掺杂的 Ba0.95Ca0.05Zr0.05Ti0.95-xHfx(BCZ0.05T(0.95-x)-xH)(x=0、0.02、0.04、0.06和0.08)陶瓷.研究B位同时含有Hf、Zr、Ti三种元素时,铪掺杂对锆钛酸钡钙陶瓷相结构、微观形貌和电学性能的调控.XRD测试结果表明,Hf4+融入晶格,造成晶格膨胀,但形成单一钙钛矿结构.BCZ0.05T(0.95-x)-xH(x=0、0.02)陶瓷中存在明显的四方相与正交相共存的多晶型相转变(PPT),但正交相逐渐转变为主晶相;BCZ0.05 T0.91-0.04H陶瓷中,四方相进一步减少,三方相却逐渐增加;当x继续增大到0.06及其以上时,该体系只存在正交相和三方相结构.SEM测试发现,随着Hf的掺杂量增加,晶粒尺寸逐渐减小.剩余极化值随Hf掺杂量的增加先增大再减小,在x为0.02时取得最大值(Pr=6.38μC/cm2),Hf掺杂显著降低矫顽场(Ec).压电测试结果表明,BCZ0.05 T0.91-0.04H陶瓷具有最大压电系数(d33=259 pC/N).
The Effects of Hafnium Doping on Electric Properties of Ba0.95 Ca0.05 Zr0.05Ti0.95-xHfx Ceramics
Hf-doped modified Ba0.95Ca0.05Zr0.05Ti0.95-xHfx(BCZ0.05T(0.95-x)-xH)(x=0,0.02,0.04,0.06 和0.08)ceramics were prepared by solid state reaction.The effect of Hf doping amount on the phase structure and electric properties was studied.The XRD results show that the coexistence of tetragonal phase and orthogonal phase structure(polymorphic phase transitions,PPT)was found at the Hf doping amount 0％and 2(mol)％.When the Hf doping amount increases to 4(mol)％,there existed the orthogonal phases and rhombohedral phases PPT structure while the residual tetragonal phases could also be found.But when the doping amount of Hf increases to 6(mol)％or more,the XRD results show that only the orthogonal phases and rhombohedral phases were existed.It can be seen from the SEM images that the doping of Hf leads to reduced grain size.The remnant polarization(Pr)of the BCZ0.05 T0.93-0.02H ceramics reaches the maximum(Pr=6.38 μC/cm2).The maximum piezoelectric coefficient is existed in the composition of BCZ0.05 T0.91-0.04H(d33=259 pC/N).
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