首页|An overview of metal hydroxyfluoride-A novel semiconductor material

An overview of metal hydroxyfluoride-A novel semiconductor material

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Semiconductors have been widely used in many high-tech fields such as photo-and electro-catalysis,ion bat-teries,and solar cells.In addition to the earliest discovered elemental and compound semiconductors,such as monocrystalline silicon and metal oxides,new types of compound semiconductors have been discovered.Among them,metal hydroxyfluorides(MOHF)are an emerging type of semiconductor that are easy to synthesize and inexpensive.However,many of their properties and applications are not well understood.Nevertheless,some MOHF materials,such as ZnOHF and CoOHF,have been sufficiently developed,and their applications have been extensively explored.This review focuses on a new compound semiconductor,MOHF,with ZnOHF and CoOHF as the typical.After a short introduction to their physical and chemical properties,their common applications are illustrated with several examples.Subsequently,other less-researched MOHF and MOHF-like materials,as well as their applications,are discussed.Moreover,the expectations and development directions of MOHFs are briefly summarized.

Metal hydroxyfluorideSemiconductorFunctional materialsPhotocatalystsElectrochemistry

Xingyu Yao、Rutao Wang、Jinbo Zhao、Fei Liu、Zhidong Jin、Zhou Wang、Fenglong Wang、Jiurong Liu、Lili Wu

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Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials,Ministry of Education,School of Materials Science and Engineering Shandong University,Jinan 250061,China

School of Materials Science and Engineering,Qilu University of Technology(Shandong Academy of Sciences),Jinan 250353,China

Natural Science Foundation of Shandong ProvinceProject of Innovation Team in Jinan City for Universities and InstitutesNatural Science and Development Foundation of ShenzhenYoung Scholars Program of Shandong University

ZR2022MF3112021GXRC063JCYJ201908070932056602018WLJH25

2024

10.1016/j.chphma.2023.07.001

化学物理材料(英文)

化学物理材料(英文)

ISSN：
年,卷(期)：2024.3(2)
  • 149