摘要
以半导体材料氮元素掺杂的氧化锌(N-ZnO)为切入点,以槲皮素修饰材料作为工作电极,制备了一种基于槲皮素-氮氧化锌纳米材料修饰检测抗坏血酸的光电化学传感器.采用光电化学方法,在光照条件下,分析了不同材料在电极上的光电响应能力,研究了不同材料之间光电流的差异变化,考察了抗坏血酸在槲皮素-纳米材料修饰电极上的电子传递能力和氧化催化反应变化,同时分析了影响实验结果的条件因素,评价了实验新方法对抗坏血酸的检测性能.实验结果表明,抗坏血酸浓度为1.0×10-5～1.0×10-4 mol/L之间,抗坏血酸浓度与峰电流存在线性关系,线性方程为I(μA)=0.284 C(mmol/L)+4.244,检出限为0.013 μmol/L.对实际样品回收率在94.5%～99.5%,相对标准偏差在0.6%～2.5%.该方法检测快速、灵敏,能成功地应用于实际样品中抗坏血酸含量的测定.
Abstract
Taking the semiconductor material N-ZnO as the breakthrough point,the quercetin-modified material as the working electrode,a photoelectrochemical sensor for detecting ascorbic acid based on quercetin-nanomaterial modification was prepared.The photoelectrochemical method was used to analyze the photoresponse ability of different materials on the electrode under the condition of illumination.The difference of photocurrent between different materials was studied.The electron transfer ability of ascorbic acid on the quercetin nanomaterial modified electrode and the oxidation catalytic reaction change were investigated.The experimental conditions affecting results were analyzed.The performance of the new method for the detection of ascorbic acid was evaluated.The concentration of ascorbic acid is between 1.0×10-5 and 1.0×10-4 mol/L.A linear relationship is observed between the concentration of ascorbic acid and peak current.The linear equation is I(µA)=0.284 C(mmol/L)+4.244,and the detection limit is 0.013 µmol/L.The actual sample recovery is 94.5%-99.5%,and the relative standard deviation is 0.6%-2.5%.The method is fast and sensitive,which can be successfully applied to the determination of ascorbic acid in actual samples.
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