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Ni掺杂ZnO电子结构理论的研究

Study on the Electronic Structure of Ni Element Doped ZnO

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应用第一性原理、电子密度泛函理论作为研究的理论基础,通过计算来研究Ni掺杂ZnO晶体的几何结构、电子内部结构和光学性质。由结构图、能带图、光吸收曲线相互分析其几何结构、电子内部结构和光学性质的形成原因。对图形进行分析,结果表明Ni掺杂使ZnO的价带上移,禁带宽度小于纯ZnO,其光吸收曲线发生红移,提高了ZnO对可见光的利用率,这一结果可为进一步研究Ni掺杂ZnO实验奠定基础。
The first-principle and electronic density functional theory is applied as the theoretical basis for the studies on crystal geometric struc-ture, internal electronic structure and optical properties of Ni doped ZnO by calculation. The forming reasons of geometric structure, internal electronic structure and optical properties were mutually analyzed by the structure chart, energy band diagram and optical absorption curve. The analysis of graphs showed that the Ni doping made the valence band of ZnO move up, the forbidden band width be less than the pure ZnO and the red shift of light absorption curve occur, and it improved the utilization rate of visible light for ZnO. The results could be a basis for the further study on Ni doped ZnO experiment.

ZnOfirst-principleband structurephotocatalytic property

魏珊珊、俞泽民

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哈尔滨理工大学 材料科学与工程学院,黑龙江 哈尔滨 150080

ZnO 第一性原理 能带结构 光催化性能

黑龙江省科技攻关项目

GC04A210

2014

化学与粘合
黑龙江省化学学会 黑龙江省科学院石油化学研究院

化学与粘合

CSTPCD
影响因子:0.386
ISSN:1001-0017
年,卷(期):2014.(3)
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