RF modeling of body contact SOI devices based on BSIM-BULK
A modeling method based on BSIM-BULK for body contact SOI devices is proposed.Based on the original BSIM-BULK,a new bulk port required by SOI device is added to the model to characterize the structure of bulk and substrate,and the RF parasitic effect of SOI is characterized by the peripheral parasitic circuit model.A definite parameter extraction method is proposed.The SOI model was obtained by fitting the test data curve by adjusting the parameters of the peripheral parasitic element and the internal model.The model can accurately characterize the characteristics of the operating area of SOI devices,so that BSIM-BULK can be applied to SOI devices.After extracting the parameters of RF model,the simulation data and test data are in good agreement.
BSIM-BULKbody contactradio frequency modelperipheral parasitic
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