基于BSIM-BULK的体接触SOI器件的射频建模
RF modeling of body contact SOI devices based on BSIM-BULK
庄宇 1周文勇 2陈展飞 1刘军1
作者信息
- 1. 杭州电子科技大学浙江省大规模集成电路设计重点实验室,杭州 310018
- 2. 北京华大九天科技股份有限公司,北京 100102
- 折叠
摘要
提出了一种适用于体接触SOI器件的建模方法.在BSIM-BULK模型的基础上,模型新增一个SOI器件所需的体端口,对体-衬底的结构进行表征,通过外围寄生电路模型来表征SOI的射频寄生效应.提出了明确的参数提取方法.通过调节外围寄生元件参数以及内部模型参数,拟合测试数据曲线得到SOI模型.模型可以准确表征SOI器件工作区域的特性,使BSIM-BULK可以适用于SOI器件.射频模型参数提取之后,模型仿真数据和测试数据吻合良好.
Abstract
A modeling method based on BSIM-BULK for body contact SOI devices is proposed.Based on the original BSIM-BULK,a new bulk port required by SOI device is added to the model to characterize the structure of bulk and substrate,and the RF parasitic effect of SOI is characterized by the peripheral parasitic circuit model.A definite parameter extraction method is proposed.The SOI model was obtained by fitting the test data curve by adjusting the parameters of the peripheral parasitic element and the internal model.The model can accurately characterize the characteristics of the operating area of SOI devices,so that BSIM-BULK can be applied to SOI devices.After extracting the parameters of RF model,the simulation data and test data are in good agreement.
关键词
BSIM-BULK/体接触/射频模型/外围寄生Key words
BSIM-BULK/body contact/radio frequency model/peripheral parasitic引用本文复制引用
出版年
2024
NETL
NSTL
万方数据