Design and Implementation on 10～20GHz Wideband Low Noise Amplifier
This paper describes the design of a 10～20GHz broadband low noise amplifier based on MMIC technology,using 0.25 GaAs pHEMT technology.The co-simulation results show that the in-band gain is up to 28dB,the noise factor is lower than 1.9dB,and the input and output return loss are lower than-15dB.The chip has the characteristics of wide broadband,high integration and low power consumption.
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万方数据
维普
