10～20GHz宽带低噪声放大器的设计和实现
Design and Implementation on 10～20GHz Wideband Low Noise Amplifier
李鑫 1肖曼琳 1杜鑫威 1肖帅1
作者信息
- 1. 上海工程技术大学 城市轨道交通学院,上海 201620
- 折叠
摘要
阐述一款采用0.25 GaAs pHEMT工艺、基于MMIC技术的10～20GHz宽带低噪声放大器设计.联合仿真结果表明,带内增益高达28dB,噪声系数低于1.9dB,输入和输出回波损耗均低于-15dB.该芯片具有宽带宽、集成度高和功耗低的特点.
Abstract
This paper describes the design of a 10～20GHz broadband low noise amplifier based on MMIC technology,using 0.25 GaAs pHEMT technology.The co-simulation results show that the in-band gain is up to 28dB,the noise factor is lower than 1.9dB,and the input and output return loss are lower than-15dB.The chip has the characteristics of wide broadband,high integration and low power consumption.
关键词
电路设计/低噪声放大器/MMIC/电流复用/GaAsKey words
circuit design/LNA/MMIC/current multiplexing/GaAs引用本文复制引用
出版年
2024
NETL
NSTL
维普
万方数据