基于阻变存储器的仿真模型设计
Design of Simulation Model Based on Resistive Variable Memory
万新宇1
作者信息
摘要
阐述RRAM模型的开关方法和电流电压关系,探讨物理电热仿真模型、斯坦福模型、黄的物理模型的仿真模型的搭建原理,RRAM的仿真分析.
Abstract
This paper describes the switching methods and current and voltage relationship of various popular RRAM models,and the building principles of physical electrothermal simulation model,Stanford model,Huang's physical model and other simulation models,and RRAM modeling simulation.
关键词
阻变存储器/氧空位电热/模拟与仿真/SPICE/有限元法Key words
resistive random access memory/oxygen vacancy/electrothermal simulation/SPICE/finite element method引用本文复制引用
出版年
2024
NETL
NSTL
维普
万方数据