Analysis of the Effective Adjustment Ability of Work Function Materials in Metal Gates
This paper describes the ability of titanium nitride to regulate the effective work function and leakage current of devices under different film thicknesses,oxidation times,and top layer work function material preparation methods.As the thickness of the titanium nitride film increases,the rate of increase in the effective work function of the device gradually slows down,decreasing from 0.16 eVnm-1(0～2.1nm)to 0.11eVnm-1(2.1～3.2nm).Oxidation of titanium nitride for 1 hour can reduce the effective work function of the device by 0.05eV,but the gate leakage current increases accordingly,which has a negative impact on the reliability of the device.In addition,using physical vapor deposition method to prepare titanium aluminum is more conducive to reducing the effective work function of the device than using atomic layer deposition method,which may be related to the higher carbon content and reduced aluminum diffusion ability of the latter.
integrated circuitwork function metaleffective work functiontitanium nitridetitanium aluminum
NETL
NSTL
万方数据
维普
