基于0.15μm GaAs pHEMT工艺的低噪声放大器设计
Design of Low Noise Amplifier Based on 0.15μm GaAs pHEMT Process
李成成 1陈珍 1赵唯一 1刘敏1
作者信息
- 1. 河南科技大学 信息工程学院,河南 450062
- 折叠
摘要
阐述一款源极负反馈结构的低噪声放大器设计,它基于0.15μm GaAs pHEMT工艺,采用微带线进行反馈和双边匹配,极大程度改善电路的噪声、增益和稳定性.放大器采用单电阻偏置方式,实现2V单电源供电,静态电流为78.9mA.它的中心频率为2.4GHz,在2.1～2.7GHz频段内最大增益大于16dB,增益平坦度在±0.6dB内,实际噪声系数小于1.5dB,系统在全频带内非常稳定,可适用于无线系统接收端前端设计.
Abstract
This paper describes the design of a low noise amplifier with a source negative feedback structure,which is based on 0.15μm GaAs pHEMT process uses microstrip lines for feedback and bilateral matching,greatly improving the noise,gain,and stability of the circuit.The amplifier adopts a single resistor bias method to achieve 2V single power supply,with a static current of 78.9mA.Its center frequency is 2.4GHz,with a maximum gain greater than 16dB in the frequency range of 2.1～2.7GHz.The gain flatness is within±0.6dB,and the actual noise coefficient is less than 1.5dB.The system is very stable throughout the entire frequency band and can be used for front-end design of wireless system receivers.
关键词
电路设计/低噪声放大器/源极负反馈/GaAs/微带线Key words
circuit design/low noise amplifier/source negative feedback/GaAs/microstrip line引用本文复制引用
出版年
2024
NETL
NSTL
万方数据