Design of Low Noise Amplifier Based on 0.15μm GaAs pHEMT Process
This paper describes the design of a low noise amplifier with a source negative feedback structure,which is based on 0.15μm GaAs pHEMT process uses microstrip lines for feedback and bilateral matching,greatly improving the noise,gain,and stability of the circuit.The amplifier adopts a single resistor bias method to achieve 2V single power supply,with a static current of 78.9mA.Its center frequency is 2.4GHz,with a maximum gain greater than 16dB in the frequency range of 2.1～2.7GHz.The gain flatness is within±0.6dB,and the actual noise coefficient is less than 1.5dB.The system is very stable throughout the entire frequency band and can be used for front-end design of wireless system receivers.
circuit designlow noise amplifiersource negative feedbackGaAsmicrostrip line
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