首页|含氮碱基缓蚀剂在铜研磨抛光后清洗液中的应用

含氮碱基缓蚀剂在铜研磨抛光后清洗液中的应用

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阐述对比不同缓蚀剂配方对铜dummy片表面腐蚀抑制的影响,并辅助不同温度、时间、浓度下的不同缓蚀剂腐蚀速率,提出含有含氮碱基缓蚀剂配方的优势.对比不同缓释剂配方的清洗效果、表面粗糙度、对PVA清洗刷表面划伤的影响,进一步验证含有含氮碱基缓蚀剂配方的PCMP样品,在碱性条件下表现最佳.可将晶圆表面铜层清洗干净,且对铜表面腐蚀起到有效抑制作用,降低表面粗糙度,延长Q-Time时间.分析PCMP处理后的晶圆表面SP2和XPS表征,验证Cu2O可以有效延长Q-time时间.
Application of Nitrogen-containing Heterocyclic Corrosion Inhibitor in PCMP Solution
This paper describes the effects of different corrosion inhibitor formulations on the surface corrosion inhibition of copper dummy,and assists in the comparative analysis of the corrosion rates of different inhibitors at different temperatures,times,and concentrations.It preliminarily proposes the advantages of formulations containing nitrogen based corrosion inhibitors.Secondly,compare the cleaning effects,surface roughness,and impact on the surface scratches of cleaning brushes PVA(polyvinyl alcohol material)with different sustained-release agent formulations,and further verify that PCMP samples containing nitrogen-containing base corrosion inhibitors exhibit the best performance under alkaline conditions.It can clean the copper layer on the surface of the wafer and effectively inhibit copper surface corrosion,reduce surface roughness,and extend the Q-Time(intermediate residence time in the process).Finally,the conclusion that Cu2O can effectively prolong the Q-time was brief verified through SP2 and XPS characterization analysis by the PCMP treated wafer surface.

integrated circuit manufacturingPCMPcorrosion inhibitorcorrosionwafer clean

史筱超、马丽、王溯

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上海市集成电路关键工艺材料重点实验室,上海 201616

上海新阳半导体材料股份有限公司,上海 201616

集成电路制造 PCMP 缓蚀剂 腐蚀 晶圆清洗

2024

集成电路应用
上海贝岭股份有限公司

集成电路应用

影响因子:0.132
ISSN:1674-2583
年,卷(期):2024.41(2)
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