制备工艺对微电子器件中CsBi3I10薄膜质量的影响
Influence of Preparation Process on the Quality of CsBi3I10 Thin Films in Microelectronic Devices
卞伟昊1
作者信息
- 1. 天津理工大学理学院,天津市量子光学与智能光子学重点实验室,天津 300384
- 折叠
摘要
阐述通过一步溶液法制备微电子器件中有源层CsBi3I10薄膜,初步探索前驱液浓度和旋涂转速对于样品薄膜微结构的影响.实验表明,前驱液的浓度会影响薄膜表面均匀性,在其他实验条件不变的情况下,浓度过低或过高都会导致薄膜致密性较差,但是前驱液浓度对于薄膜的结晶取向和光学带隙影响不大.通过改变旋涂转速会影响溶剂的挥发速率,改变钙钛矿的结晶过程,进而导致薄膜颗粒尺寸和薄膜厚度的变化.
Abstract
This paper describes the preparation of active layer CsBi3I10 thin films in microelectronic devices using a one-step solution method,and preliminarily explores the effects of precursor concentration and spin coating speed on the microstructure of the sample thin films.Experiments have shown that the concentration of precursor solution can affect the surface uniformity of thin films.Under other experimental conditions,low or high concentrations can lead to poor film density.However,the concentration of precursor solution has little effect on the crystal orientation and optical band gap of thin films.Changing the spin coating speed can affect the solvent evaporation rate,alter the crystallization process of perovskite,and ultimately lead to changes in film particle size and thickness.
关键词
电子器件/半导体材料/制备工艺Key words
electronic devices/semiconductor materials/fabrication processes引用本文复制引用
出版年
2024
NETL
NSTL
万方数据