Influence of Preparation Process on the Quality of CsBi3I10 Thin Films in Microelectronic Devices
This paper describes the preparation of active layer CsBi3I10 thin films in microelectronic devices using a one-step solution method,and preliminarily explores the effects of precursor concentration and spin coating speed on the microstructure of the sample thin films.Experiments have shown that the concentration of precursor solution can affect the surface uniformity of thin films.Under other experimental conditions,low or high concentrations can lead to poor film density.However,the concentration of precursor solution has little effect on the crystal orientation and optical band gap of thin films.Changing the spin coating speed can affect the solvent evaporation rate,alter the crystallization process of perovskite,and ultimately lead to changes in film particle size and thickness.
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