Study on Improving Morphology of Epitaxial Layer in Source Drain Region of PMOS in FD-SOI Devices
This paper expounds that the irregular morphology of SiGe RSD in FD-SOI devices is the reason for the metal piercing of the Si Cap layer.To address this issue,the preparation process of SiGe RSD was optimized layer by layer(L1/L2/L3),resulting in the preparation of samples with regular morphology and smooth surface.The subsequent contact through-hole process did not puncture the Si Cap layer,forming a good alloy,and the performance of the device PMOSFET was significantly improved.
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