Analysis of Lateral Etching Interface and Process Improvement for Tunneling Oxide of Flash
This paper describes that in the production process of SONOS flash memory,the lateral etching amount of the tunneling oxide layer is one of the key factors affecting the performance stability of SONOS devices.It is the first to propose that the diffusion distance of chemical etching solution at the oxide layer and photoresist interface is a key factor in the lateral etching amount.
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维普
