Analysis of Reliability of Enhanced GaN Power Transistors
This paper expounds the switch conduction process and build the equivalent modelthrough the elaboration of Gallium Nitride device structure and characteristics,and carries on the analysisfrom two parts,drive circuit and the outsideenvironmentfrom within the influence of common mode transient events(CMTI),concluded that the different factors effecting the reliability of gallium nitride power device,based on the reliability analysis is put forward for different power tube opening event with different solutions,and ADE by Cadence simulation software simulation verify the reliability of the results.
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