Study on the Improvement of the HARP-SiCoNi Process in the Mass Production Environment to Improve the Filling Capacity of High Step Ratio Compared to Shallow Trench Isolation
This paper describes the"non-standard V-type"STI structure with"high step ratio"in mass production environment,the void free filling scheme of the structure using the traditional combination of HARP and SiCoNi process,and the process window of HARP pre-deposition thickness and SiCoNi etching amount in testing,so as to release the void free filling of"non-standard V-shaped"trench with"high step ratio"in mass production environment.
integrated circuits manufacturingSTI gap fillHARPSiCoNiVoid
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