Study on Preparation and Properties of Low TCR-MIM Tantalum Nitride Plate
This paper describes that TCR MIM structure has better stability,accuracy and adjustability,and is suitable for high-precision and high-stability application scenarios.The effects of deposition times,sputtering power and N2 flow rate on the performance of tantalum nitride(TaN)electrode plate and MIM are studied,and a Low TCR TaN as the bottom plate of MIM structure is obtained.Then the base power is maintained and the N2 flow rate is about 1.2 times the base flow rate,the TRC of MIM structure reached at 2ppm/℃,the MIM structural reliability test is passed,and an excellent TaN plate with low temperature drift coefficient is obtained,which is conductive to the preparation of high-performance MIM capacitors.
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