Analysis of the Influence of Front Structure on the Performance of Fully Isolated CMOS Image Sensors
This paper describes the effects of different metal contact hole structures and polycrystalline silicon structures in the front section of fully isolated image sensors on their optical and electrical performance.The experimental results show that setting a metal contact hole structure in the pixel isolation area,or simultaneously setting a metal contact hole and a polycrystalline silicon structure,can improve the infrared light band anti-interference ability of the sensor.Moreover,the isolation structure combining the metal contact hole and polycrystalline silicon can also improve the electrical high-temperature performance of the sensor.
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