Analysis of the Impact of High K Materials on the Performance of CMOS Image Sensors
This paper describes the effects of Ta2O5 and Al2O3 materials with different thicknesses on the surface of the BDIT structure on the optical and electrical properties of the sensor.Experimental results show that changing the thickness of Ta2O5 has great impact on the sensor QE and high-temperature performance,while changing the thickness of Al2O3 mainly affects the high-temperature performance.By adjusting the thickness of Ta2O5 and Al2O3,the high-temperature performance of the image sensor can be improved,and the QE characteristics of the sensor can also be changed.
integrated circuitbackside-illuminated image sensorbackside deep trench isolationdark current
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