Analysis of Investigation of Intra-field CDU Reduction and the Improvement of Process Window
This paper expounds that with the development of semiconductor process nodes,the minimum linewidth of key photolithography layers becomes smaller and smaller,resulting in a smaller allowable range of pattern edge position errors.The improvement of line width uniformity within the exposure unit is difficult to control due to various factors such as mask production and exposure behavior,resulting in many products experiencing failure at fixed positions in the Field during yield verification.It explores using different compensation methods to optimize the linewidth uniformity within the exposure unit on products with 28nm HKC+technology,seeking fast and efficient compensation methods to reduce Intra field CDU and improve the process window of graphic technology.
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