一种32MHz低温漂高精度张弛型振荡器的设计
Design of a 32MHz Low Temperature Drift High Precision Relaxation Oscillator
梁国辉1
作者信息
- 1. 上海贝岭股份有限公司,上海 200233
- 折叠
摘要
阐述基于0.18μm CMOS工艺设计的一种低温漂张弛型振荡器.该张弛型振荡器在使用平均周期反馈控制的基础上采用金属薄膜电阻和金属-绝缘体-金属电容作为振荡单元,可以实现温度从-40～125℃变化时1%的频率漂移.
Abstract
This paper describes a low-temperature drift relaxation oscillator designed based on 0.18μm CMOS technology.This relaxation type oscillator uses a metal thin film resistor and a metal insulator metal capacitor as oscillation units based on average period feedback control,and can achieve a frequency drift of 1%when the temperature changes from-40 to 125℃.
关键词
张弛型振荡器/高精度/低温漂/金属薄膜电阻Key words
relaxation oscillator/high precision/low temperature drift/metal thin film resistor引用本文复制引用
出版年
2024
NETL
NSTL
万方数据