Design of a New High Dynamic Range CMOS Image Sensor Structure
This paper describes a novel high dynamic range CMOS image sensor structure.In the new CMOS image sensor,the pixels include two photodiodes with different photosensitivity and multiple charge voltage conversion gain levels,and the column circuit has multiple analog voltage gain levels.According to this structure and readout method,only one signal voltage reading is performed on each pixel,which can significantly shorten the row readout time and thereby improve the frame rate.
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