Analysis of the Process for Improving the Durability of EEPROM Erasure and Write Times
This paper describes a method based on device process characteristics to improve the endurance of EEPROM erase times.It uses controlling the proportion of doped chlorine to improve the quality of the floating gate oxide layer(tunneling oxide layer),especially on both sides,and uses rapid thermal annealing technology to repair oxide layer defects,further improving the quality of the oxide layer.
万方数据
维普
