This paper expounds the effects of polishing head pressure and H2O2 concentration in polishing slurry on copper removal rate and planarization of TSV process surface.It is found that the CMP processing efficiency is high and the hole depth is less than 0.5μm when the rapid polishing pressure is 3.0psi,the slow polishing pressure is 1.0psi and the H2O2 concentration is 2wt%.
万方数据
维普
