Design of High Frequency Power Supply for Radar Microwave Amplifier Based on SiC
This paper introduces a 1 kW power supply that utilizes 3.3 kV silicon carbide(SiC)MOSFETs and Schottky di-odes to achieve a wide voltage range of 22 Vdc to 2.5 kVdc.The power supply provides power to the solid-state microwave power am-plifier in the ship's radar decoy.High voltage silicon carbide semiconductors are used to switch high voltages at high frequencies without the need for input series connections of devices or converters.In order to eliminate switching losses and minimize noise,a half bridge ZVS topology is adopted,including device characteristics,circuit design,packaging,and desktop experimental results.Injection solutions for isolated gate drive and 2.5 kV startup are introduced.Through device characteristic analysis,circuit design packaging,and desktop experiments,it has been proven that the combination of high-voltage SiC-MOSFET and Schottky diode is an effective technology for achieving high-frequency and high power density conversion in this application.
silicon carbide MOSFETmicrowave power amplifierhigh frequency power supply
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