Study on Etching of Silicon Resistance Strip Shallow Groove of Piezoresistive Pressure Sensor
The resistance bar etching effect of MEMS piezoresistive pressure sensor plays an important role in the performance of the sensor and the working life in high temperature environment.The etching experiment is carried out by SPTS deep silicon etch-ing machine with SF6 as etching gas and C4F8 as shielding gas.The parameters are matched by changing the etching gas inlet time,the shielding gas inlet time and the RF power.The etching effect is evaluated according to the observation data of the step meter and the SEM electron microscope.Finally,the etching gas flow rate is 25 sccm and the etching gas inlet time is 2.5 s.The protection gas flow rate is 50 sccm,the protection gas is 2.5 s,and the RF power is 2 500 W.Under this condition,the etching rate is 1.54 μm/loop.The etching uniformity is 2.9%.
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