An Evaluation Method of Irradiation Effects for GaN-based Devices
In this paper,a method for evaluating the irradiation effect of GaN-based devices is proposed.Starting from the degradation caused by the irradiation effect,the proposed method consists of the evaluation of the irradiation effect of material degra-dation based on device structure and the evaluation of irradiation effect based on electrical properties,so as to achieve a comprehen-sive evaluation of the irradiation effect of the device.In addition,this paper selects specific devices for practical verification,which strongly supports the feasibility and effectiveness of the proposed evaluation method.
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