基于GaN材料的器件辐照效应的评估方法
An Evaluation Method of Irradiation Effects for GaN-based Devices
甄子新 1冯慧 1王冲 1张楠 1冯春2
作者信息
- 1. 中国航天科工防御技术研究试验中心 北京 100854
- 2. 中科院半导体所半导体材料科学重点实验室 北京 100083
- 折叠
摘要
论文提出了一种基于GaN材料的器件辐照效应的评估方法,从GaN基器件的辐照效应导致的退化出发,涵盖基于结构的材料退化的辐照效应评估和基于电学性能的辐照效应评估,实现对器件辐照效应的全面评估.此外,论文选取具体的器件进行实践验证,证实了所提出的评估方法的可行性和有效性.
Abstract
In this paper,a method for evaluating the irradiation effect of GaN-based devices is proposed.Starting from the degradation caused by the irradiation effect,the proposed method consists of the evaluation of the irradiation effect of material degra-dation based on device structure and the evaluation of irradiation effect based on electrical properties,so as to achieve a comprehen-sive evaluation of the irradiation effect of the device.In addition,this paper selects specific devices for practical verification,which strongly supports the feasibility and effectiveness of the proposed evaluation method.
关键词
GaN/辐照效应/评估方法Key words
GaN/irradiation effects/evaluation method引用本文复制引用
基金项目
国家重点研发计划青年科学家项目(2022YFB3607600)
出版年
2024
国家科技期刊平台
NSTL
万方数据