Life Analysis of Power Semiconductor Wire Bonds Based on Power Cycle Simulation Test
With the ever-increasing performance requirements of power semiconductor devices,more and more attention has been paid to their packaging reliability.In order to make the device as a whole meet the reliability capabilities under high tempera-ture,high frequency,high power,radiation resistance and other working conditions,it is necessary to focus on breakthroughs in new packaging materials or improved packaging technologies that restrict the development of three-generation semiconductor reli-ability.In this paper,the typical SiC MOSFET is taken as the research object,and the reliability of the bonding point of the device under typical power cycle conditions is studied by constructing a simulation method suitable for the power cycle test.The correspond-ing strain and strain energy density are obtained under the conditions of different bonding wire diameters and cycle times.The life of the bonding point of the device is analyzed and calculated using the energy model of damage accumulation.The simulation method is used to realize the anlysis and evaluation of the reliability of the middle bond in power cycle test of the power device.
power componentpower cycle testdamage accumulationlife expectancy
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