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MPCVD金刚石涂层均匀性生长的数值模拟与实验

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基于多物理场耦合仿真软件COMSOL Multiphysics的微波等离子体模块建立MPCVD反应腔内氢气等离子体的仿真模型,研究基底外侧增设的环状钼支架与基底的不同高度差△h对基底表面等离子体分布的影响.采用变异系数对等离子体分布的均匀性进行定量分析,并用SEM对金刚石涂层表面的微观形貌进行表征.结果表明:当△h=0 mm时,等离子体分布的均匀性最佳,变异系数为3.998%,金刚石涂层的晶粒分布及大小的均匀性相较于无钼支架时的明显提升;当△h<0mm时,等离子体分布的均匀性随△h增大而提升,变异系数由10.265%降至3.998%;当△h>0mm时,等离子体分布的均匀性不增反降,变异系数升高至10.048%.此外,当△h=-2.0mm时,基底表面的等离子体密度约下降20%,不利于金刚石涂层生长.
Numerical simulation and experiment of uniform growth of MPCVD diamond coating
Based on the microwave plasma module of multiphysics simulation software COMSOL Multiphysics,a nu-merical model of hydrogen plasma inside a MPCVD reactor was built.The effect of different height differences △h between the circular molybdenum support added on the outer side of the substrate and the substrate on the plasma distri-bution at the surface of the substrate was investigated.The uniformity of plasma distribution was quantitatively ana-lyzed by coefficient of variation,and the microstructure of diamond coating surface was characterized by SEM.The res-ults show that when △h=0 mm,the uniformity of plasma distribution is the best,the coefficient of variation is 3.998%,and the uniformity of grain distribution and size of diamond coating is significantly improved compared with that without molybdenum support.When △h<0 mm,the uniformity of plasma distribution increases with the increase of △h,and the coefficient of variation decreases from 10.265%to 3.998%.When △h>0 mm,the uniformity of plasma distribu-tion does not increased but decreases,and the coefficient of variation increases to 10.048%.In addition,when △h=-2.0 mm,the plasma density on the substrate surface decreases by about 20%,which is not conducive to the growth of dia-mond coating.

diamond coatinguniformitymicrowave plasmanumerical simulation

张斌华、简小刚

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同济大学机械与能源工程学院,上海 201804

金刚石涂层 均匀性 微波等离子体 数值模拟

国家自然科学基金国家自然科学基金

5027509551275358

2024

金刚石与磨料磨具工程
郑州磨料磨具磨削研究所

金刚石与磨料磨具工程

CSTPCD北大核心
影响因子:0.354
ISSN:1006-852X
年,卷(期):2024.44(2)
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