纳米划擦速度对单晶硅去除行为的影响
Effect of nano-scratch speed on removal behavior of single crystal silicon
田海兰 1闫少华 2孙真真 1王浩昌 1闫海鹏3
作者信息
- 1. 郑州财经学院 智能工程学院,郑州 450000
- 2. 机械工业第六设计研究院有限公司 智能制造工程院,郑州 450000
- 3. 河北科技大学 机械工程学院,石家庄 050018
- 折叠
摘要
单晶硅作为典型的硬脆材料在不同的划擦速度下会有不同的应变率,进而产生不同的材料去除行为,采用分子动力学从应变率角度研究不同划擦速度下材料的变形与去除过程.结果表明:划擦过程中随划擦速度由 25 m/s增加到 250 m/s,单晶硅的应变率从 1.25×1010 s-1 提高至 1.25×1011 s-1,其划擦力、剪切应力和摩擦系数减小,划擦温度升高,且划擦表面的轮廓精度和粗糙度随划擦速度的增大而改善.划擦过程中的非晶化和相变是单晶硅纳米尺度变形的主要发生机制,剪切应力减小造成其亚表面损伤层深度由 2.24 nm减小到1.89 nm,划擦温度升高导致其表面非晶层深度增加.
Abstract
As a typical hard and brittle material,single-crystal silicon exhibits different strain rates at varying scratch-ing speeds,leading to diverse material removal behaviors.Molecular dynamics was used to study the deformation and removal processes of single-crystal silicon at different scratching speeds from the perspective of strain rate.The results show that the strain rate of the material increases from 1.25×1010 s-1 to 1.25×1011 s-1 as the scratching speed increases from 25 m/s to 250 m/s.At the same time,the scratching parameters,including scratching force,shear stress,and fric-tion coefficient,decrease while the scratching temperature increases.Additionally,the contour accuracy and roughness of the scratch surface improve with increased scratching speeds.Amorphization and phase transformation during the scratching process are the main mechanisms of nanoscale deformation in single-crystal silicon.The depth of the subsur-face damage layer decreases from 2.24 nm to 1.89 nm with the increase of shear stress,while the depth of the amorph-ous layer increases with the rise in scratching temperature.
关键词
单晶硅/纳米划擦/分子动力学/划擦速度/应变率Key words
single crystal silicon/nano-scratch/molecular dynamics/scratching speed/strain rate引用本文复制引用
基金项目
河北省自然科学基金(E2021208004)
出版年
2024
国家科技期刊平台
NSTL
万方数据