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基于单颗金刚石划擦的单向Cf/SiC复合材料去除机理

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为研究单向Cf/SiC复合材料划擦去除机理,采用单颗金刚石磨粒开展准静态划擦试验,分析不同压痕载荷下划擦材料的声发射信号变化,结合SEM形貌分析材料的去除行为和划擦去除机理.试验结果表明:声发射信号强度随着压痕载荷增加而增强,相同参数下SB方向信号值更大,信号波动更剧烈.结合声发射信号与SEM形貌分析,得出材料在不同方向的划擦去除行为,材料以脆性去除为主,SA方向纤维以拉伸断裂和纤维拔出为主,SB方向纤维主要断裂方式为弯曲断裂和剪切断裂.根据SEM形貌分析,阐述去除行为的形成过程,即解释材料划擦去除机理.
Removal mechanism of unidirectional Cf/SiC composites based on single diamond grit scratching
To investigate the scratch removal mechanism of unidirectional Cf/SiC composite materials,quasi-static scratching tests were carried out using a single diamond abrasive grain to analyze the changes in acoustic emission sig-nals of the scratched materials under different indentation loads.These tests were complemented by SEM images to ana-lyze the removal behavior and scratch removal mechanism of the materials.The test results show that the acoustic emis-sion signal value increases with the increase in indentation load.Under the same parameters,the signal value in the SB direction is larger,and the signal fluctuation is more severe.Combining the acoustic emission signal and SEM morpho-logy analysis,it is concluded that the scratch removal behavior of the material varies in different directions.The materi-al primarily undergoes brittle removal.In the SA direction,fibers mainly experience tensile fracture and fiber pull-out,whereas in the SB direction,the main fracture modes of the fiber are bending fracture and shear fracture.According to the SEM morphology analysis,the formation process of the removal behavior and the material scratch removal mechan-ism are described.

unidirectional Cf/SiC compositessingle diamond grit scratchingacoustic emission signalmaterial re-moval mechanism

温家宙、王庆霞、余爱武、吴重军

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东华大学 机械工程学院,上海 201600

上海航天工艺与装备工程技术研究中心,上海 201108

上海航天设备制造总厂有限公司,上海 201108

单向Cf/SiC复合材料 单颗磨粒划擦试验 声发射信号 材料去除机理

国家自然科学基金上海市自然科学基金上海航天科技创新基金中国博士后科学基金

5200509822ZR1402400SAST2022-0592022M721910

2024

金刚石与磨料磨具工程
郑州磨料磨具磨削研究所

金刚石与磨料磨具工程

CSTPCD北大核心
影响因子:0.354
ISSN:1006-852X
年,卷(期):2024.44(3)