为研究氧化铟锡(indium tin oxide,ITO)导电玻璃材料的去除机理,采用单磨粒对材料进行切削仿真,建立了ITO导电玻璃的材料模型,根据加工表面形貌、应力和切削力情况分析了材料去除机理,之后研究了切削参数对切削力和残余应力的影响,并与钠钙玻璃进行对比分析.结果表明:在磨粒的切削过程中,材料的去除受ITO薄膜层、玻璃基底和内聚力接触行为的共同影响,会产生分层、通道开裂和层间断裂等失效形式;随着磨粒的进给,切削力在一定范围内波动,且呈现上升、稳定、降低的变化,同时磨粒的切削力与切削速度和切削深度呈正相关;薄膜上残余应力相比玻璃基底,数值更大且波动更剧烈;当切削深度接近ITO薄膜厚度时,薄膜的存在对磨粒切削行为的影响显著.
Simulation experimental on material removal mechanism of ITO conductive glass by single abrasive
To study the removal mechanism of ITO conductive glass materials,this paper uses a single abrasive particle to simulate the cutting process of the materials and establishes a material model for ITO glass.Based on the analysis of processed surface morphology,stress,and cutting force,the material removal mechanism of ITO glass is examined.Ad-ditionally,the influence of cutting parameters on cutting force and residual stress is studied and compared with soda-lime glass.The results show that during the cutting process of abrasive particle,material removal is influenced by the ITO film layer,the glass substrate,and cohesive contact behavior,leading to failure forms such as delamination,chan-nel cracking,and interlayer fracture.With the feed of the abrasive particle,the cutting force fluctuates within a certain range,exhibiting a pattern of growth,stability,and decrease.The cutting force of the abrasive particle is positively cor-related with both cutting speed and cutting depth.Compared to the glass substrate,the residual stress on the ITO film is larger and fluctuates more dramatically.The presence of the ITO film significantly influences cutting behavior,espe-cially when the cutting depth approaches the thickness of the ITO film.
ITO conductive glassmaterial removal mechanismcutting forceresidual stress
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