Study on the Performance of Graphene/GaN Ultraviolet Photodetectors Regulated Through Interface Engineering(Invited)
Interface engineering stands out as an effective method for enhancing the performance of photodetectors.This study presents ultraviolet(UV)photodetectors featuring a Gr(2D)/GaN(3D)van der Waals heterojunction,skillfully regulated through interface engineering control.The GaN film efficiently absorbs photons,generating electron-hole pairs promptly separated by the built-in electric field.Photogenerated holes traverse to the Gr side through the tunneling effect,while photogenerated electrons move towards the GaN side.At elevated built-in field levels,high-speed photogenerated carriers undergo impact ionization,leading to a multiplication of the photocurrent.The outcomes highlight the significant influence of lead sulfide quantum dots(PbS QDs)on the light absorption efficiency and photoelectric conversion efficiency of the device.Consequently,the device achieves a remarkable responsivity value of 395.2 A/W and a substantial detectivity value of 4.425×1015 Jones under 5 μW/cm2 light at-2 V.This research contributes to the application of interface engineering technology in Gr-based UV photodetectors,opening possibilities for the preparation of high-performance UV detectors.
gallium nitridetwo-dimensional/three-dimensionalmetal organic chemical vapor depositionultraviolet photodetector
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