界面工程调控石墨烯/氮化镓紫外光电探测性能研究(特邀)
Study on the Performance of Graphene/GaN Ultraviolet Photodetectors Regulated Through Interface Engineering(Invited)
高芳亮 1陈坤 1刘青 1王幸福 1杨纪锐 1徐明俊 1贺宇浩 1石宇豪 1许腾文 1阳志超 2李述体1
作者信息
- 1. 华南师范大学半导体科学与技术学院,广东 广州 510631
- 2. 东莞南方半导体科技有限公司,广东 东莞 523781
- 折叠
摘要
界面工程是提高光电探测器性能的有效方法之一.报道了基于界面工程调控的石墨烯(Gr,2D)/GaN(3D)范德瓦耳斯异质结紫外光电探测器.GaN吸收光子产生电子空穴对,并在内建电场作用下发生分离.其中,光生空穴利用隧穿效应向Gr一侧迁移,而光生电子向GaN一侧迁移.在较高的电场驱动下,载流子将发生碰撞,造成光电流倍增,使得器件的光吸收效率与光电转化效率有明显提升.因此,器件在-2 V偏压条件和5 μW/cm2紫外光照射下,展示出较高的响应度(395.2 A/W)和较大的探测率(4.425×1015 Jones)值.该研究丰富了界面工程技术在Gr基紫外光电探测器的应用,为制备高性能紫外探测器提供了可能.
Abstract
Interface engineering stands out as an effective method for enhancing the performance of photodetectors.This study presents ultraviolet(UV)photodetectors featuring a Gr(2D)/GaN(3D)van der Waals heterojunction,skillfully regulated through interface engineering control.The GaN film efficiently absorbs photons,generating electron-hole pairs promptly separated by the built-in electric field.Photogenerated holes traverse to the Gr side through the tunneling effect,while photogenerated electrons move towards the GaN side.At elevated built-in field levels,high-speed photogenerated carriers undergo impact ionization,leading to a multiplication of the photocurrent.The outcomes highlight the significant influence of lead sulfide quantum dots(PbS QDs)on the light absorption efficiency and photoelectric conversion efficiency of the device.Consequently,the device achieves a remarkable responsivity value of 395.2 A/W and a substantial detectivity value of 4.425×1015 Jones under 5 μW/cm2 light at-2 V.This research contributes to the application of interface engineering technology in Gr-based UV photodetectors,opening possibilities for the preparation of high-performance UV detectors.
关键词
氮化镓/二维/三维/金属有机化学气相沉积/紫外探测器Key words
gallium nitride/two-dimensional/three-dimensional/metal organic chemical vapor deposition/ultraviolet photodetector引用本文复制引用
基金项目
国家自然科学基金(62375090)
国家自然科学基金(62374062)
国家自然科学基金(12374072)
出版年
2024
NETL
NSTL
万方数据