首页|低维钙钛矿模板调控MAPbI3钙钛矿晶体生长与光伏性能的研究

低维钙钛矿模板调控MAPbI3钙钛矿晶体生长与光伏性能的研究

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钙钛矿太阳能电池材料因其低成本及优异的光电物理性能受到光伏领域的极大青睐。在双源蒸镀法制备钙钛矿光吸收层过程中,钙钛矿薄膜长期面临生长机制不明、结晶质量较差的问题,严重影响钙钛矿薄膜光吸收性质、载流子寿命等重要参量,阻碍了气相沉积钙钛矿太阳能电池器件效率的提升。利用不同大半径有机阳离子设计准二维(2D)钙钛矿材料,在钙钛矿/空穴传输层界面构筑准2D钙钛矿缓冲层模板,调控气相蒸镀钙钛矿的晶体生长过程,获得了垂直生长的柱状钙钛矿晶粒,显著提升了钙钛矿层光吸收性能与载流子寿命,实现了钙钛矿太阳能电池效率从16。21%到19。55%的提升。上述结果为气相蒸镀实现优异光电性能的钙钛矿薄膜及光伏器件提供了有价值的参考。
Low-Dimensional Perovskite Templated Growth of MAPbI3 Perovskite Crystals and Photovoltaic Performance of Solar Cells
Due to low costs and exceptional photoelectric properties,perovskite solar cell materials have attracted great attention.During the fabrication of perovskite light-absorbing layers,dual-source vapor-deposited perovskite thin films suffer from long-standing issues of unknown growth mechanism and inferior crystallization quality,which negatively impacts the optical absorbance and charge carrier lifetimes of perovskite thin films,impeding the performance development of vapor-deposited perovskite solar cell devices.By utilizing bulky organic cations with different radii,this work designs quasi two-dimensional perovskite materials,and apply them as buffering templates at the perovskite/hole transport layer interfaces,thus manipulating the crystal growth process of vapor-deposited perovskite grains.The modified crystallization patterns result in vertically grown perovskite grains with columnar shapes,which notably enhances light-absorbing properties and carrier lifetimes of perovskite layers,boosting the power conversion efficiency from 16.21%to 19.55%on perovskite solar cells.The abovementioned results have provided valuable references to the vapor-deposited perovskite films and photovoltaic devices with outstanding optoelectronic performance.

perovskite materialscarrier lifetimescrystal growthsolar cellstemplate-induced growth

杨云云、吴婧仪、马胤译、弓爵、李发明

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电子科技大学材料与能源学院,四川成都611731

钙钛矿材料 载流子寿命 晶体生长 太阳能电池 模板诱导生长

国家自然科学基金国家自然科学基金四川省中央引导地方科技发展专项四川省自然科学基金-青年科学基金项目

62004027522022162021ZYD00482023NSFSC0962

2024

激光与光电子学进展
中国科学院上海光学精密机械研究所

激光与光电子学进展

CSTPCD北大核心
影响因子:1.153
ISSN:1006-4125
年,卷(期):2024.61(5)
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