首页|基于MEMS微镜的激光干涉直写设备曝光时间优化

基于MEMS微镜的激光干涉直写设备曝光时间优化

扫码查看
使用微机电系统(MEMS)微镜搭建的光扫描式激光干涉直写设备具有体积小、直写速度快、光路简单等优点,但是其扫描时需要对曝光时间进行修正以达到均匀的曝光效果.介绍了该激光干涉直写设备的光路组成以及控制方法,利用查表法对生成的曝光图样和曝光时间参数进行了优化,使像素点直径变化从84%降低到了6%,解决了应用MEMS微镜激光干涉直写设备时存在的曝光时间不均匀的问题.
Exposure Time Optimization of Laser Interference Direct Writing Device Based on MEMS Micromirror
Laser interference direct writing device constructed with MEMS(microelectro mechanical systems)micromirrors has advantages such as small size,fast writing speed and simple optical path.However,it is necessary to adjust the exposure time to achieve uniform exposure effect during scanning.We introduce the optical path composition and control method of this type of laser interference direct writing device.The lookup table method is used to optimize the generated exposure pattern and exposure time parameters,reducing the pixel diameter variation from about 84%to about 6%.It solves the problem of uneven exposure time in the application of laser interference direct writing devices based on MEMS micromirrors.

laser opticslaser interference direct writingdot matrix grating mapmicromirrormicro-nano structure processing

余冠群、吕柏莹、许玥、曾中明、吴东岷

展开 >

中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台,江苏 苏州 215123

上海科技大学物质科学与技术学院,上海 201210

激光光学 激光干涉直写 点阵光栅图 微镜 微纳结构加工

国家重点研发计划

2021YFB3202200

2024

激光与光电子学进展
中国科学院上海光学精密机械研究所

激光与光电子学进展

CSTPCD北大核心
影响因子:1.153
ISSN:1006-4125
年,卷(期):2024.61(9)
  • 9