Characterization of Tunable Narrow-Linewidth Semiconductor Lasers with Micro-Ring-Based External Cavities
We characterized and studied tunable narrow-linewidth semiconductor lasers based on external cavity feedback and silicon-nitride micro-rings.Tuning of the driving current of the gain chip,voltages of the two micro ring thermoelectric electrodes,voltage of the phase saving thermoelectric electrodes,and temperature control of the semiconductor cooler,the C-band tunable output has been achieved in a side mode suppression ratio and output power larger than 52 dB and larger than 10 dBm,respectively.Further,white noise measurements of the narrow-linewidth semiconductor laser indicate a laser linewidth of 0.84 kHz,and the phase noise values at 0.01,0.1 and 1 kHz are 581.04,60.47 and 6.70 µrad/Hz1/2,respectively.In the 1‒20 GHz range,the relative intensity noise(RIN)of the laser is less than-156 dB/Hz.These excellent performance parameters of tunable narrow-linewidth semiconductor lasers suggest their application potential in optical fiber sensing,microwave photonics,coherent communication,and Doppler LiDAR.
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