微环外腔可调谐窄线宽半导体激光器特性分析
Characterization of Tunable Narrow-Linewidth Semiconductor Lasers with Micro-Ring-Based External Cavities
刘绍殿 1肖永川 1李朋飞 1冯琛 1瞿鹏飞1
作者信息
- 1. 重庆光电技术研究所,重庆 400060
- 折叠
摘要
对基于氮化硅的微环外腔反馈窄线宽半导体激光器进行了性能表征和研究.通过对增益芯片的驱动电流、两个微环热电极电压、相位节热电极电压和半导体制冷器(Thermoelectric cooler,TEC)温度控制等参数的调节,实现了C波段可调谐输出,所提激光器的边模抑制比≥52 dB,输出功率>10 dBm.通过对激光器高频白噪声进行表征,计算得到激光器的线宽为0.84 kHz,相位噪声在0.01、0.1和1 kHz处分别为581.04、60.47和6.70 µrad/Hz1/2.通过对激光器的相对强度噪声(RIN)进行测试,在1～20 GHz范围内,激光器RIN≤-156 dB/Hz.基于上述优异的性能,基于氮化硅的微环外腔反馈窄线宽半导体激光器有望在光纤传感、微波光子、相干通信和多普勒激光雷达等领域发挥潜在应用价值.
Abstract
We characterized and studied tunable narrow-linewidth semiconductor lasers based on external cavity feedback and silicon-nitride micro-rings.Tuning of the driving current of the gain chip,voltages of the two micro ring thermoelectric electrodes,voltage of the phase saving thermoelectric electrodes,and temperature control of the semiconductor cooler,the C-band tunable output has been achieved in a side mode suppression ratio and output power larger than 52 dB and larger than 10 dBm,respectively.Further,white noise measurements of the narrow-linewidth semiconductor laser indicate a laser linewidth of 0.84 kHz,and the phase noise values at 0.01,0.1 and 1 kHz are 581.04,60.47 and 6.70 µrad/Hz1/2,respectively.In the 1‒20 GHz range,the relative intensity noise(RIN)of the laser is less than-156 dB/Hz.These excellent performance parameters of tunable narrow-linewidth semiconductor lasers suggest their application potential in optical fiber sensing,microwave photonics,coherent communication,and Doppler LiDAR.
关键词
微环谐振腔/氮化硅/宽带可调谐波长/窄线宽/半导体激光器Key words
micro-ring resonator/silicon nitride/tunable broadband wavelength/narrow linewidth/semiconductor laser引用本文复制引用
出版年
2024
NETL
NSTL
万方数据