逆向光刻工艺进展
Progress in Inverse Lithography Technology
王富天 1魏娟 1王翠香 1姜淼 1穆昱 1于春龙 1刘蕊华 1李福 1范菁晶 1刘金来 1秦靖康 1田恩强 1孙松 1王冲 1刘晓楠 1杨昊 1梁迪 1闫彬斌 1李亮 1曹清晨 1师江柳1
作者信息
- 1. 北京超弦存储器研究院光刻研发部,北京 100176
- 折叠
摘要
光刻是先进集成电路制造的关键工艺,其利用光衍射-干涉和光化学反应原理,将集成电路图形从掩模版转移到半导体晶圆上.随着摩尔定律的不断推进,光刻关键尺寸逐步微缩,逼近光刻机的分辨率极限.由于光学邻近效应的作用,晶圆上的光刻成像图形偏离掩模图形,利用计算光刻技术来修正光学邻近效应变得必不可少.计算光刻在过去近20年蓬勃发展,成为掩模图形处理的关键步骤.逆向光刻技术是近几年投入量产使用的新型技术,它基于像素修正,不同于传统计算光刻修正方式.逆向光刻技术具有更大的工艺窗口,更好的图形保真度和均匀性.本文首先介绍逆向光刻技术的工作原理,国内外逆向光刻技术相关研究进展、成果和应用,分析工艺应用中各个环节的需求和挑战.然后,介绍与之配套的掩模制造工艺流程,逆向光刻掩模的制造挑战以及目前的解决方案.最后,讨论未来逆向光刻技术的发展方向.
Abstract
Lithography is a critical process in advanced integrated circuit manufacturing,transferring circuit patterns from a mask to semiconductor wafers through optical diffraction-interference and photochemical reactions.With the continuous advancement of Moore's Law,the critical dimensions in lithography are gradually shrinking,approaching the resolution limits of lithography equipment.This transition exacerbates the optical proximity effect,leading to deviations between the lithographic images on the wafer and the intended mask patterns.To address this,computational lithography has become essential for correcting these deviations over the past two decades.Recently,inverse lithography technology(ILT)has emerged as a significant advancement.Unlike traditional methods,ILT employs pixel-by-pixel correction and has been integrated into mass production,enhancing process windows,pattern fidelity,and uniformity.This paper introduces the operational principles of ILT,reviews its progress and achievements,explores its applications in various scenarios,and discusses the associated challenges and requirements in process applications.Additionally,it details the mask manufacturing process flow,the challenges in ILT mask production,and the current solutions,concluding with potential future directions for ILT development.
关键词
逆向光刻技术/计算光刻/光刻/掩模版Key words
inverse lithography technology/computational lithography/lithography/mask引用本文复制引用
出版年
2024
NETL
NSTL
万方数据