激光与光电子学进展2024,Vol.61Issue(21) :280-287.DOI:10.3788/LOP240788

长波量子阱红外探测器激光辐照损伤脉宽效应数值模拟

Numerical Simulation of Laser Irradiation Damage Pulse-Width Effect on Long-Wave Quantum Well Infrared Photodetector

孙佳鑫 钱传鹏 徐作冬 张检民 叶锡生
激光与光电子学进展2024,Vol.61Issue(21) :280-287.DOI:10.3788/LOP240788

长波量子阱红外探测器激光辐照损伤脉宽效应数值模拟

Numerical Simulation of Laser Irradiation Damage Pulse-Width Effect on Long-Wave Quantum Well Infrared Photodetector

孙佳鑫 1钱传鹏 1徐作冬 2张检民 2叶锡生1
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作者信息

  • 1. 中国科学院上海光学精密机械研究所王之江激光创新中心,上海 201800;中国科学院大学材料科学与光电技术学院,北京 100049
  • 2. 西北核技术研究所激光与物质相互作用国家重点实验室,陕西 西安 710024
  • 折叠

摘要

基于量子阱红外探测器长波8.2 μm单脉冲激光辐照二维轴对称热学和力学简化模型,通过有限元方法数值模拟计算了不同脉宽条件下探测器瞬态温度场和应力场分布,初步给出了1~300 ns脉宽范围内的器件热分解、熔融和应力诱导损伤阈值随激光脉宽的变化规律.结果表明,探测器的激光峰值能量密度损伤阈值随脉宽的减小而降低.当激光脉宽从300 ns减小至1 ns时:量子阱探测器的热分解损伤阈值从3.16 J/cm2 降至2.43 J/cm2,降低了23.10%;熔融损伤阈值从5.50 J/cm2降至4.22 J/cm2,降低了23.27%;应力诱导损伤阈值从8.92 J/cm2降至4.94 J/cm2,降低了44.62%.

Abstract

Based on a two-dimensional axisymmetric thermal and mechanical simplified model of a quantum well infrared photodetector under 8.2 μm long-wave infrared mono-pulse laser irradiation,the transient temperature and stress-field distribution of the detector under various pulse widths were calculated using the finite-element method.In addition,variations in the thresholds of the detector for thermal decomposition,melting,and stress-induced damages under laser irradiation with the pulse width ranging from 1 to 300 ns were preliminarily determined.Results show that damage thresholds exhibit a downward trend as the laser pulse width decreases.Specifically,when the pulse width reduced from 300 to 1 ns,the decomposition damage threshold decreases by 23.10%(from 3.16 to 2.43 J/cm2),melting damage threshold decreases by 23.27%(from 5.50 to 4.22 J/cm2),and stress-induced damage threshold decreases by 44.62%(from 8.92 to 4.94 J/cm2).

关键词

量子阱红外探测器/长波红外单脉冲激光/激光辐照损伤脉宽效应

Key words

quantum well infrared photodetector/long-wave infrared mono-pulse laser/laser irradiation damage pulse-width effect

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出版年

2024
激光与光电子学进展
中国科学院上海光学精密机械研究所

激光与光电子学进展

CSTPCDCSCD北大核心
影响因子:1.153
ISSN:1006-4125
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