碳化硅晶圆超快激光偏振动态调控切割技术研究
Dynamic Control of Ultrafast Laser Polarization for Silicon Carbide Wafer Cutting
王思博 1洪子钦 1张金玲 1吴俊霄 1叶云霞 1任旭东1
作者信息
- 1. 江苏大学机械工程学院,江苏 镇江 212013
- 折叠
摘要
晶圆激光切割是一个重要的工艺环节,光束偏振态对晶圆切割的效率和质量有着重要的影响.基于液晶空间光调制器(SLM),采用1/2波片和1/4波片的组合,通过动态加载不同的灰度图图案至SLM,实现对光束偏振态的动态调控.在此基础上,实现了光束偏振态与加工路径始终保持平行、垂直以及呈43°夹角这三种条件下的单晶碳化硅(SiC)的切割方法.研究结果表明:当光束偏振态与加工路径始终保持平行时,材料切口前沿对光具有较好的吸收,烧蚀效率最高,晶圆的上、下表面热影响区、崩边尺寸和横截面粗糙度均最小,该切割方法有助于获得更高效、更高质量的晶圆切割.
Abstract
The laser cutting of wafers is critical in the manufacturing process,with the polarization state of the beam significantly affecting the efficiency and quality of wafer cutting.Utilizing a liquid crystal spatial light modulator(SLM)in conjunction with combinations of half-wave and quarter-wave plates allows one to achieve dynamic control over the polarization state of the beam by dynamically loading various grayscale patterns onto the SLM.Based on this concept,three methodologies were implemented for cutting monocrystalline silicon carbide(SiC),ensuring that the polarization state of the beam remains parallel,perpendicular,or oriented 43° to the processing path direction.The results indicate that when the polarization state of the beam is parallel to the processing-path direction,the material cutting edge exhibits superior light absorption,thus resulting in the highest ablation efficiency.Additionally,the heat-affected zones on the top and bottom surfaces of the wafer,the edge chipping sizes,and the cross-sectional roughness are minimized,thus facilitating the attainment of more efficient and higher-quality wafer cutting.
关键词
超快激光/碳化硅/液晶空间光调制器/偏振态/晶圆切割Key words
ultrafast laser/silicon carbide/liquid-crystal spatial light modulator/polarization state/wafer cutting引用本文复制引用
出版年
2024
NETL
NSTL
万方数据