首页|高质量碲镉汞双层异质结材料制备

高质量碲镉汞双层异质结材料制备

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本文重点介绍了富汞垂直液相外延技术,在对该技术进行研究时,提出了一种温场优化方法和一种生长方法来提升材料质量和工艺稳定性.最后介绍基于双层异质结材料采用台面结器件加工等碲镉汞探测器组件制备方法,制备中波、长波和甚长波碲镉汞探测器组件的进展情况.
Preparation of high-quality mercury cadmium telluride double-hetero structure materials
This paper focuses on the technology of mercury cadmium telluride(MCT)vertical liquid phase epitaxy,in which a temperature field optimization method and a growth method are proposed to improve the material quality and process stability.The progress in the preparation of mid-wave,long-wave,and very long-wave MCT detector compo-nents is based on double-hetero structure materials using methods such as tabletop junction device processing.

MCTvertical liquid phase epitaxyp-on-n type heterojunction

郝斐、折伟林、杨海燕、刘兴新、胡易林、邢晓帅、刘世光、王鑫、孙浩

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华北光电技术研究所,北京 100015

碲镉汞 富汞垂直液相外延 p-on-n型异质结

2024

激光与红外
华北光电技术研究所

激光与红外

CSTPCD北大核心
影响因子:0.723
ISSN:1001-5078
年,卷(期):2024.54(8)