This paper focuses on the technology of mercury cadmium telluride(MCT)vertical liquid phase epitaxy,in which a temperature field optimization method and a growth method are proposed to improve the material quality and process stability.The progress in the preparation of mid-wave,long-wave,and very long-wave MCT detector compo-nents is based on double-hetero structure materials using methods such as tabletop junction device processing.
关键词
碲镉汞/富汞垂直液相外延/p-on-n型异质结
Key words
MCT/vertical liquid phase epitaxy/p-on-n type heterojunction
维普
万方数据