激光与红外2024,Vol.54Issue(12) :1807-1814.DOI:10.3969/j.issn.1001-5078.2024.12.001

InSb晶体生长模拟仿真技术现状及展望

Current situation and prospect of InSb crystal growth simulation technology

杨文博 赵超 董涛 折伟林 邢伟荣
激光与红外2024,Vol.54Issue(12) :1807-1814.DOI:10.3969/j.issn.1001-5078.2024.12.001

InSb晶体生长模拟仿真技术现状及展望

Current situation and prospect of InSb crystal growth simulation technology

杨文博 1赵超 1董涛 1折伟林 1邢伟荣1
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作者信息

  • 1. 中国电子科技集团公司第十一研究所,北京 100015
  • 折叠

摘要

计算机模拟仿真技术是提升直拉法生长的大直径InSb单晶质量、降低晶体制备成本的有效工具.现在市面上投入使用的模拟仿真软件种类众多,而用于InSb晶体生长的模拟案例很少.通过对已有使用案例的分析可以获知各型软件的特点,分析对比各自的优缺点和适用的生长方法,结合InSb晶体生长特性来选择最适合用于InSb直拉法生长的模拟软件.

Abstract

Computer simulation technology is an effective tool to improve the quality of large-diameter InSb single crys-tals grown by Czochralski method and reduce crystal preparation costs.There are many types of simulation software currently available on the market,but there are very few simulation cases used for InSb crystal growth.By analyzing the existing cases,the characteristics of each type of software can be obtained,and their advantages and disadvantages as well as applicable growth methods can be compared.Based on the growth characteristics of InSb crystals,the most suitable simulation software for the InSb Czochralski growth can be selected.

关键词

InSb/晶体生长/模拟/直拉法

Key words

InSb/crystal growth/simulation/CZ technique

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出版年

2024
激光与红外
华北光电技术研究所

激光与红外

CSTPCDCSCD北大核心
影响因子:0.723
ISSN:1001-5078
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