CMP工艺参数对AlGaInP基LED衬底转移的影响
Effect of CMP process parameters on the substrate transfer of AlGaInP-based LEDs
王嘉伟 1许英朝 2杨凯 3鹿晨东 1范浩爽 1陆逸1
作者信息
- 1. 厦门理工学院光电与通信工程学院,福建厦门 361024
- 2. 厦门理工学院光电与通信工程学院,福建厦门 361024;厦门理工学院光电技术与器件福建省重点实验室,福建厦门 361024
- 3. 厦门士兰明镓化合物半导体有限公司,福建厦门 361024
- 折叠
摘要
以GaP/Al2O3/SiO2引导式出光结构作为芯片键合层,通过化学机械抛光工艺减少AlGaInP基Mini-LED衬底转移过程中出现的外延层空洞,提高芯片制备工艺良率.以材料去除速率和表面粗糙度作为技术评价指标,基于单因素实验结果对抛光压力、抛光头转速、抛光盘转速、抛光液流速四个影响化学机械抛光工艺的因素展开L9(34)的正交实验,实验结果表明:在抛光头转速75 r/min、抛光盘转速80 r/min、抛光压力8 kPa、抛光液流速100mL/min条件下,材料去除速率为83.12nm/min,表面粗糙度最低为0.477 nm,采用优化后的工艺条件能够获得高质量的GaAs键合表面,有效减少外延空洞,提高制备良率.
Abstract
In this paper,the GaP/Al2O3/SiO2 guided light-emitting structure is used as the bonding layer of the chip,and the chemical mechanical polishing process is introduced to reduce the epitaxial voids in the transfer process of AlGaInP-based Mini-LED substrates to improve the chip preparation process yields.Using material removal rate and surface roughness as technical evaluation indexes,L9(34)orthogonal experiments were conducted based on the re-sults of single-factor experiments on polishing pressure,polishing head speed,polishing plate speed,and polishing fluid flow rate.The experimental results show that the material removal rate is 83.12 nm/min and the surface rough-ness is as low as 0.477 nm under the conditions of polishing head speed 75 rpm,polishing plate speed 80 rpm,polis-hing pressure 8 kPa and polishing fluid flow rate 100 mL/min.The optimized process conditions can obtain high quali-ty GaAs bonding surfaces,effectively reduce epitaxial voids,and improve preparation yields.
关键词
化学机械抛光工艺/AlGaInP/正交试验/表面粗糙度/良率Key words
chemical mechanical polishing/AlGaInP/orthogonal experiment/roughness of surface/yield rate引用本文复制引用
基金项目
福建省自然科学基金面上项目(2019J01876)
厦门市科技计划重大项目(3502ZCQ20191002)
出版年
2024
NETL
NSTL
万方数据