The measurement accuracy of nano line widths,a critical nano geometric characteristic parameter,is of paramount importance in fields such as advanced manufacturing.As the scale of nanotechnology continues to shrink,achieving sub-nanometer measurement accuracy presents new challenges.The 26th General Conference on Weights and Measures(CGPM)in 2018 proposed using the silicon{220}lattice spacing as a secondary realization of the meter,providing a novel approach for atomic-level nano line width measurements.In this study,a 22 nm intrinsic silicon lattice line width standard was developed using multi-layer film deposition technology.Employing high-resolution transmission electron microscopy(HRTEM),the silicon lattice constant within the standard was used as a scale for direct nano line width measurement.The measurement uncertainty achieved is better than 1 nm.
metrologysilicon lattice constantnano line widthtransmission electron microscopycritical dimensionstraceability
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维普
