Improving Theresistive-Switching Stability of ZrO2 Thin Films by Combined Process
This paper discusses the effect of the combination of nano shielding array(SA)and oxygen plas-ma treatment on improving theresistive-switching(RS)stability of ZrO2 thin films.The nanocrystalline SA was prepared by vapor deposition,and then selective oxygen plasma treatment was carried out on the RS layer by u-sing the gap constraint of the SA,the conductive filaments will be concentrated in the low crystalline region.The results of SEM(scaning electron microscope)and XRD(X-ray diffraction)show that the SA produced by 1500℃vapor deposition has the best restraint action of conducting filaments,and the resistance switching ratio reaches 104 orders of magnitude in the corresponding electrical test,the change of storage window is less than 10%after thousand RS cycles.
万方数据
