Preparation of Few-layer MoS2 Films with High Crystalline Quality and Research on Their Structural Properties
High-quality few-layer MoS2 films were prepared on Mo substrates using a gas-solid method.The structure and morphology of the sample were characterized by X-ray diffractometer(XRD),Raman spectrometer and optical microscope(OM),and the effects of growth temperature on the structure,morphology and photoluminescence properties of the thin film were studied.The results show that large-area thin films grown at temperatures of 800,900,and 1000 ℃ exhibit a dendritic crystal structure,the crystallinity of the prepared films improves with increasing growth temperature.The characteristic Raman peaks of all samples are located near 385.7 cm-1 and 410.8 cm-1with a differ-ence of 25.1 cm-1 between these two characteristic peaks,indicating that the grown films are few-layer MoS2 films.All samples exhibit a luminescence peak at 693 nm,corresponding to a bandgap of 1.789 eV belonging to a direct bandgap semiconductor.The films prepared by this method have important ap-plication value in achieving photodetector devices with wide-band absorption and high photoresponsivi-ty.
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