金属功能材料2024,Vol.31Issue(4) :67-75.DOI:10.13228/j.boyuan.issn1005-8192.20240067

n型氢化纳米晶硅薄膜在柔性钙钛矿太阳电池中的应用

Application of N-type hydrogenated nanocrystalline silicon thin film in flexible perovskite solar cells

靳果 王记昌 闫奇
金属功能材料2024,Vol.31Issue(4) :67-75.DOI:10.13228/j.boyuan.issn1005-8192.20240067

n型氢化纳米晶硅薄膜在柔性钙钛矿太阳电池中的应用

Application of N-type hydrogenated nanocrystalline silicon thin film in flexible perovskite solar cells

靳果 1王记昌 1闫奇2
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作者信息

  • 1. 河南工业职业技术学院自动化工程学院,河南南阳 473000
  • 2. 国网南阳供电公司,河南南阳 473000
  • 折叠

摘要

柔性钙钛矿太阳电池电子传输层的低温制备工艺是影响其光电转换效率和大规模应用的关键因素.将n型氢化纳米晶硅薄膜作为柔性钙钛矿太阳电池电子传输层,研究射频功率、掺杂浓度等制备参数对薄膜性能的影响,得到暗电导率、光透过率、表面形貌适用于柔性钙钛矿太阳电池电子传输层的n型氢化纳米晶硅薄膜低温制备条件.经过界面优化处理的柔性钙钛矿太阳电池转换效率达到14.66%,推动了柔性钙钛矿太阳电池的发展,为制备高性能的柔性钙钛矿太阳电池提供了新的研究思路和方法.

Abstract

The low-temperature preparation process of the electronic transport layer in flexible perovskite solar cells was a key factor affecting their photoelectric conversion efficiency and large-scale applications.The n-type hydrogen-ated nanocrystalline silicon thin film was used as the electronic transport layer of flexible perovskite solar cells,and the effects of preparation parameters such as radio frequency power and doping concentration on the performance of the thin film were studied.The low-temperature preparation conditions of n-type hydrogenated nanocrystalline sili-con thin film suitable for the electronic transport layer of flexible perovskite solar cells were obtained,including dark conductivity,light transmittance,and surface morphology.With interface optimization,the conversion efficiency of flexible perovskite solar cells reached 14.66%,promoting the development of flexible perovskite solar cells and pro-viding new research ideas and methods for preparing high-performance flexible perovskite solar cells.

关键词

柔性钙钛矿太阳电池/电子传输层/n型氢化纳米晶硅/低温

Key words

flexible perovskite solar cells/electronic transport layer/n-nc-Si:H/low temperature

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基金项目

河南省科技攻关项目(242102241024)

河南省科技攻关项目(232102240031)

出版年

2024
金属功能材料
中国钢研科技集团有限公司 中国金属学会功能材料分会

金属功能材料

CSTPCD
影响因子:0.527
ISSN:1005-8192
参考文献量9
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