Application of N-type hydrogenated nanocrystalline silicon thin film in flexible perovskite solar cells
The low-temperature preparation process of the electronic transport layer in flexible perovskite solar cells was a key factor affecting their photoelectric conversion efficiency and large-scale applications.The n-type hydrogen-ated nanocrystalline silicon thin film was used as the electronic transport layer of flexible perovskite solar cells,and the effects of preparation parameters such as radio frequency power and doping concentration on the performance of the thin film were studied.The low-temperature preparation conditions of n-type hydrogenated nanocrystalline sili-con thin film suitable for the electronic transport layer of flexible perovskite solar cells were obtained,including dark conductivity,light transmittance,and surface morphology.With interface optimization,the conversion efficiency of flexible perovskite solar cells reached 14.66％,promoting the development of flexible perovskite solar cells and pro-viding new research ideas and methods for preparing high-performance flexible perovskite solar cells.
flexible perovskite solar cellselectronic transport layern-nc-Si:Hlow temperature
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