首页|低修复成本的局部混合修复阵列码模型

低修复成本的局部混合修复阵列码模型

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具有局部修复性质的水平阵列码将编码矩阵进行分区管理,降低磁盘发生故障时需要读取的数据总量并提升修复效率,但仍存在修复时读写负载集中于单个磁盘的问题.针对局部水平阵列码磁盘读写不均和单双盘修复效率有待提升的问题,结合水平阵列码和垂直阵列码的特点,对其进行局部冗余改造,提出一种具有局部修复性质的混合式阵列码修复模型—LHRC.LHRC根据垂直阵列码的思想将局部水平阵列码的对角校验列迁移至矩阵的中间行,加深数据块与校验块之间的联系,分散读写负载至其他磁盘并减少参与修复的数据总量.通过理论分析,LHRC具有良好的编译码复杂度,改善了磁盘修复时读写不均匀的问题并减少单双盘故障时需要读取的数据总量,提升了三盘故障的修复成功率.实验结果表明LHRC与RDP、LRRDP、DRDP相比,LHRC可将单盘故障修复时间节省3.92%~29.91%、双盘故障修复时间节省7.79%~30.64%.
Local hybrid repair array code model with low repair cost
Horizontal array codes with local repair partition the coding matrix to reduce the total amount of data to be read when a disk fails and improve repair efficiency,but there is still the problem that the read and write loads are concentrated on a single disk during repair.To address the problems of uneven disk read/write and single/dual disk repair efficiency,this paper combined the features of horizontal and vertical array codes and local redundancy to propose a hybrid array code repair model with local re-pair propertie—LHRC(local hybrid repair code).Based on the idea of vertical array code,LHRC relocated the diagonal check-sum columns of local horizontal array code to the middle rows of the matrix,which deepened the connection between data blocks and checksum blocks,dispersed the read/write loads to other disks,and reduced the total amount of data involved in repair.Through theoretical analysis,LHRC has good compilation code complexity,improves the problem of uneven reading and writing during disk repair and reduces the total amount of data to be read during single and double disk failure,and improves the success rate of repairing three-disk failure.The experimental results show that compared with RDP,LRRDP and DRDP,LHRC can save 3.92%to 29.91%of single-disk failure repair time and 7.79%to 30.64%of double-disk failure repair time.

array codestorage systemlocal repairread overhead load

王宇恒、熊攀、唐聃、蔡红亮

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成都信息工程大学软件工程学院,成都 610225

四川省信息化应用支撑软件工程技术研究中心,成都 610225

阵列码 存储系统 局部修复 读取开销

2025

计算机应用研究
四川省电子计算机应用研究中心

计算机应用研究

北大核心
影响因子:0.93
ISSN:1001-3695
年,卷(期):2025.42(1)