首页|退火对不同金属薄膜上的BN/MoS2异质结构形貌、结构和电性能的影响

退火对不同金属薄膜上的BN/MoS2异质结构形貌、结构和电性能的影响

扫码查看
原文链接
  • NETL
  • NSTL
  • 万方数据
以过渡金属硫化物、氮化硼等二维层状材料为基础,研究了一种简单可靠的集成电路制造方法.在这项工作中,采用射频磁控溅射在室温下逐层制备了M/BN/MoS2(M=Al、Ti、Mo和 Ag)纳米薄膜,其中BN/MoS2 为未发生化学反应的异质结构,然后在 500℃进行退火.结果表明:所制备的金属(Al、Ti、Mo和 Ag)、BN和MoS2 薄膜均匀连续,特别是BN/MoS2 异质结构界面清晰、结合紧密.退火后,顶层MoS2 薄膜颗粒大小、粗糙度和结晶性显著提高,且杂质减少甚至消失,其中Ag/BN膜基底上MoS2薄膜结晶性最好,且出现了较大的片层状形态.电性能测试显示金属/BN和BN/MoS2 异质结构界面的肖特基势垒使得样品的I-V特性曲线呈明显的非线性.Ti基由于退火后氧化,电阻率最大,Mo基功函数最大,电阻率其次,Ag基功函数相对较低所以电阻率较低,而Al则由于低的功函数、结构匹配及载流子浓度等因素导致其电阻率最低.
Effect of annealing on morphology,structure and electrical properties of BN/MoS2 heterostructures on different metal films
A simple and reliable integrated circuit manufacturing method was studied based on two-dimensional layered materials such as transition metal sulfides and boron nitride(BN).In this work,M/BN/MoS2(M=Al,Ti,Mo and Ag)nano films were prepared layer by layer at room temperature using radio frequency magnetron sputtering,wherein the BN/MoS2 was a heterogeneous structure without chemical reaction,and then annealed at 500℃.The results show that the prepared metal(Al,Ti,Mo and Ag),BN and MoS2 thin films are uniform and continuous,especially the BN/MoS2 heterostructure interface is clear and tightly bonded.After annealing,the particle size,roughness and crystallinity of the top layer MoS2 film are significantly improved,and the impurities are reduced or even disappeared.Among them,the MoS2 film on the Ag/BN film substrate has the best crystallinity and exhibits a large lamellar morphology.The electrical performance tests show that the Schottky barrier at the interface of the metal/BN and BN/MoS2 heterostructures results in a significant nonlinearity in the I-V characteristic curve of the samples.Due to oxidation after annealing,Ti has the highest resistivity,while Mo has the highest work function and a slightly lower resistivity than Ti.Ag has a relatively low work function,and a lower resistivity than Mo,while Al has the lowest resistivity due to the factors such as low work function,structural matching and high carrier concentration.

BN/MoS2 heterostructuremetal-semiconductor contactsuccessive layer-by-layer depositionannealingradio frequency magnetron sputtering

刘春泉、熊芬、马佳仪、周锦添、蒋玉琳、贺紫怡、陈敏纳、张颖

展开 >

湖南工学院材料科学与工程学院,湖南 衡阳 421002

湖南工学院计算机科学与工程学院,湖南 衡阳 421002

BN/MoS2 异质结构 金半接触 连续逐层沉积 退火 射频磁控溅射

湖南省科技人才托举工程"小荷"科技人才专项湖南省自然科学基金湖南省创新型省份建设专项科普专项湖南省应用特色学科材料科学与工程学科项目湖南工学院自科培育项目大学生创新创业训练计划(2023)大学生创新创业训练计划(2023)大学生创新创业训练计划(2023)大学生创新创业训练计划(2023)

2023TJ-X102023JJ501082023ZK4316湘教通[2022]351号2022HY007国家级:S202311528049S202311528056X省级:S202311528111S202311528096X

2024

10.13289/j.issn.1009-6264.2023-0357

材料热处理学报
中国机械工程学会

材料热处理学报

CSTPCD北大核心
影响因子：0.958
ISSN：1009-6264
年,卷(期)：2024.45(5)
  • 42