Si基SiC薄膜物理制备工艺研究进展
Advances in physical preparation process of SiC thin films on Si substrates
苏江滨 1朱秀梅 1季雪梅 1祁昊 1潘鹏 1何祖明1
作者信息
- 1. 常州大学微电子与控制工程学院,江苏常州 213164
- 折叠
摘要
随着微纳电子器件集成化程度不断提高,用Si基SiC薄膜取代SiC体单晶引起了人们极大的兴趣,这种方法不仅有利于降低生产成本,还能与Si基大规模集成电路兼容.文章综述了磁控溅射、分子束外延、离子束溅射、离子注入4种物理制备Si基SiC薄膜主要工艺的研究进展,简单阐述了各种工艺对薄膜性能的影响,对各种工艺的优缺点和存在的问题进行了评述,同时指明了 Si基SiC薄膜领域未来的发展方向.
Abstract
With the continuous improvement of the integration degree of micro/nano electronic de-vices,the replacement of SiC bulk single crystal with Si based SiC films is not only conducive to reduc-ing the production cost,but also compatible with Si based large-scale integrated circuits.Therefore,the preparation of SiC thin films on Si substrates has aroused great interest.In this review,the re-search progress of four main physical preparation processes of Si based SiC thin films,including mag-netron sputtering,molecular beam epitaxy,ion beam sputtering and ion implantation,is reviewed.The effects of various processes on the properties of thin films are briefly described.Further,the ad-vantages,disadvantages and existing problems of various processes are reviewed,and the future devel-opment direction of Si-based SiC thin films is also pointed out.
关键词
SiC薄膜/磁控溅射/分子束外延/离子束溅射/离子注入Key words
SiC thin films/magnetron sputtering/molecular beam epitaxy/ion beam sputtering/ion implantation引用本文复制引用
基金项目
江苏省自然科学基金(BK20191453)
江苏省研究生科研创新计划(KYCX21_2819)
江苏省研究生科研创新计划(KYCX21_2825)
出版年
2024
国家科技期刊平台
NSTL
维普
万方数据