Advances in physical preparation process of SiC thin films on Si substrates
With the continuous improvement of the integration degree of micro/nano electronic de-vices,the replacement of SiC bulk single crystal with Si based SiC films is not only conducive to reduc-ing the production cost,but also compatible with Si based large-scale integrated circuits.Therefore,the preparation of SiC thin films on Si substrates has aroused great interest.In this review,the re-search progress of four main physical preparation processes of Si based SiC thin films,including mag-netron sputtering,molecular beam epitaxy,ion beam sputtering and ion implantation,is reviewed.The effects of various processes on the properties of thin films are briefly described.Further,the ad-vantages,disadvantages and existing problems of various processes are reviewed,and the future devel-opment direction of Si-based SiC thin films is also pointed out.
SiC thin filmsmagnetron sputteringmolecular beam epitaxyion beam sputteringion implantation
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